1994. 12. 20 1/3 semiconductor technical data ktc3112 epitaxial planar npn transistor revision no : 0 general purpose application. switching application. feature high dc current gain : h fe =600 3600. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) note: h fe classification a:600 1800 , b:1200 3600 characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =6v, i c =2ma 600 - 3600 collector- emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v transition frequency f t v ce =10v, i c =10ma 100 250 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 3.5 - pf noise figure nf(1) v ce =6v, i c =0.1ma, f=100hz, rg=10k u - 0.5 - db nf(2) v ce =6v, i c =0.1ma, f=1khz, rg=10k u - 0.3 - db
1994. 12. 20 2/3 ktc3112 revision no : 2 c collector current i (ma) 0 30 dc current gain h fe 3 1 0.3 0.1 collector current i (ma) c 0 base-emitter voltage v (v) be be c i - v h - i i - v c ce ce collector-emitter voltage v (v) 0 0 collector current i (ma) c v - i c collector current i (ma) 0.1 0.3 1 3 0.01 collector-emitter saturation 10 transition frequency f (mhz) t -3 -1 -0.3 -0.1 emitter current i (ma) e f - i 123456 20 40 60 80 100 120 140 160 common emitter ta=25 c 400 200 100 80 60 50 40 30 20 i =10 a b 0 0.2 0.4 0.6 0.8 1.0 1.2 20 40 60 80 100 120 140 160 common emitter v =6v ce ta=100 c ta=25 c ta=-25 c fe c 10 30 100 200 50 100 300 500 1k 3k 5k common emitter v =6v ce ta=100 c ta=25 c ta=-25 c ce(sat) c voltage v (v) ce(sat) 10 30 100 0.03 0.05 0.1 0.3 0.5 1 common emitter i / i =10 c b ta=100 c ta=25 c ta=-25 c v - i c collector current i (ma) 0.1 3 0.1 be(sat) base-emitter saturation be(sat) c voltage v (v) 0.3 1 10 30 100 0.3 0.5 1 3 5 10 common emitter i /i =10 c b ta=25 c te -10 -30 -100 30 50 100 300 500 1k 2k common emitter v =10v ta=25 c ce 200 200
1994. 12. 20 3/3 ktc3112 revision no : 2 c - v cb collector-base voltage v (v) 0.1 0.3 1 3 100 ob 1 collector output capacitance 10 ob cb c (pf) 10 30 100 3 5 30 50 i =0 f=1mhz ta=25 c e
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